BSC050NE2LSATMA1 vs BSZ011NE2LS5IATMA1 Comparison

Detailed side-by-side comparison of BSC050NE2LSATMA1 by Infineon and BSZ011NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC050NE2LSATMA1

BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon

BSC050NE2LSATMA1 βœ“ Active
Infineon
BSZ011NE2LS5IATMA1

BSZ011NE2LS5IATMA1 - 25V 1.1mΞ© OptiMOS 5 N-MOSFET | Infineon

BSZ011NE2LS5IATMA1 βœ“ Active

Specification Comparison

Parameter BSC050NE2LSATMA1 BSZ011NE2LS5IATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.36 $0.55
FET Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 25 V β€”
Continuous Drain Current (I_D) at Tc=25C 58 A β€”
Continuous Drain Current (I_D) at Ta=25C 39 A β€”
R_DS(on) max at V_GS=10V 5 mOhm β€”
R_DS(on) typical at V_GS=10V 4.2 mOhm β€”
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] β€”
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] β€”
Power Dissipation at Ta=25C 2.5 W β€”
Power Dissipation at Tc=25C 28 W β€”
Technology OptiMOS 25V (trench) OptiMOS 5 (Trench)
Package PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TSDSON-8-34 (PQFN 3.3x3.3 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C -55Β°C to +150Β°C
RoHS Status Compliant Compliant
Drain-Source Voltage (VDS) β€” 25 V
Continuous Drain Current (ID) at TA=25Β°C β€” 35 A
Continuous Drain Current (ID) at TC=25Β°C β€” 40 A
On-State Resistance RDS(on) max at VGS=10 V β€” 1.1 mΞ© (typical, per datasheet title)
Power Dissipation at TA=25Β°C β€” 2.1 W
Power Dissipation at TC=25Β°C β€” 69 W
Gate Threshold Voltage VGS(th) β€” 1.0 V to 2.0 V (typical 1.5 V)
Gate Drive Voltage (recommended) β€” 4.5 V to 10 V
MSL Level β€” MSL1 (per JEDEC J-STD-020)
Lead-Free β€” Yes
Halogen-Free β€” Yes

Datasheets & Resources

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