BSC050NE2LSATMA1 vs BSZ036NE2LSATMA1 Comparison
Detailed side-by-side comparison of BSC050NE2LSATMA1 by Infineon and BSZ036NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050NE2LSATMA1
BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon
BSC050NE2LSATMA1 β ActiveInfineon
BSZ036NE2LSATMA1
BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon
BSZ036NE2LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC050NE2LSATMA1 | BSZ036NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.42 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 25 V | β |
| Continuous Drain Current (I_D) at Tc=25C | 58 A | β |
| Continuous Drain Current (I_D) at Ta=25C | 39 A | β |
| R_DS(on) max at V_GS=10V | 5 mOhm | β |
| R_DS(on) typical at V_GS=10V | 4.2 mOhm | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | β |
| Power Dissipation at Ta=25C | 2.5 W | β |
| Power Dissipation at Tc=25C | 28 W | β |
| Technology | OptiMOS 25V (trench) | β |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TSDSON-8-FL (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | -55C to +150C |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 25V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (ID) at TA=25C | β | 16 A |
| Continuous Drain Current (ID) at TC=25C | β | 40 A |
| Power Dissipation (PD) at TA=25C | β | 2.1 W |
| Power Dissipation (PD) at TC=25C | β | 37 W |
| Configuration | β | Single |
| MSL Level | β | 1 (Unlimited) |
| Lead-Free | β | Yes |
| Gate Drive | β | Logic-level compatible |