BSC050NE2LSATMA1 vs BSZ096N10LS5ATMA1 Comparison
Detailed side-by-side comparison of BSC050NE2LSATMA1 by Infineon and BSZ096N10LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050NE2LSATMA1
BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon
BSC050NE2LSATMA1 β ActiveInfineon
BSZ096N10LS5ATMA1 - 100V 9.6mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC050NE2LSATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.94 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 25 V | β |
| Continuous Drain Current (I_D) at Tc=25C | 58 A | β |
| Continuous Drain Current (I_D) at Ta=25C | 39 A | β |
| R_DS(on) max at V_GS=10V | 5 mOhm | β |
| R_DS(on) typical at V_GS=10V | 4.2 mOhm | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | β |
| Power Dissipation at Ta=25C | 2.5 W | β |
| Power Dissipation at Tc=25C | 28 W | β |
| Technology | OptiMOS 25V (trench) | OptiMOS 5 trench MOSFET |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | -55 Β°C to +150 Β°C (junction) |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS max) | β | 100 V |
| Gate-Source Voltage (VGS max) | β | 20 V (typical) |
| Continuous Drain Current (ID, TC=25 Β°C) | β | 40 A |
| Maximum Silicon Drain Current (ID max) | β | 62 A |
| Pulse Drain Current (ID,pulse) | β | 160 A |
| On-Resistance RDS(on) max | β | 9.6 mΞ© at VGS=10 V |
| Total Power Dissipation (Ptot, TC=25 Β°C) | β | 69 W |
| Gate Threshold Voltage VGS(th) | β | Logic-level (low single-volt range) |
| Diode Continuous Forward Current (IS) | β | 40 A (TC=25 Β°C) |
| Diode Forward Voltage (VSD) | β | 0.85 V typ, 1.2 V max at IF=20 A |
| Gate Drive | β | Logic-level compatible |
| ESD Protection | β | Yes (gate-integrated) |
| Packaging Code | β | ATMA1 (tape and reel) |