BSC052N08NS5ATMA1 vs BSC030N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSC052N08NS5ATMA1 by Infineon and BSC030N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC052N08NS5ATMA1
BSC052N08NS5ATMA1 - 80V 95A 5.2mΞ© OptiMOS 5 N-FET | Infineon
BSC052N08NS5ATMA1 β ActiveInfineon
BSC030N03LSGATMA1
BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon
BSC030N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC052N08NS5ATMA1 | BSC030N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC052N08NS5ATMA1 | β |
| Technology | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tc) | 95 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max @ VGS=10V | 5.2 mΞ© | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage VGS(th) typ | 2.5-3.0 V | β |
| Total Power Dissipation (Tc) | 83 W | β |
| Total Power Dissipation (Ta) | 2.5 W | β |
| Operating Junction Temperature | -55C to +150C | -55C to +150C |
| Package | PG-TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | 1 |
| Series | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | β | 100 A |
| Continuous Drain Current (Id) @ Ta=25C | β | 23 A |
| RDS(on) Max @ VGS=10V | β | 3 mOhm |
| RDS(on) Max @ VGS=4.5V | β | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (Vgs th) Typ | β | 2.2 V |
| Gate Charge (Qg) Typ @ VGS=15V | β | 55 nC |
| Output Charge (Qoss) | β | 66 pF |
| Input Capacitance (Ciss) Typ | β | 4.3 nF |
| Power Dissipation (Pd) @ Ta=25C | β | 2.5 W |
| Power Dissipation (Pd) @ Tc=25C | β | 69 W |
| Avalanche Rated | β | Yes (100% tested) |