BSC052N08NS5ATMA1 vs BSC059N04LSGATMA1 Comparison
Detailed side-by-side comparison of BSC052N08NS5ATMA1 by Infineon and BSC059N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC052N08NS5ATMA1 | BSC059N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.39 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC052N08NS5ATMA1 | β |
| Technology | OptiMOS 5 | OptiMOS 3 (N-channel trench MOSFET) |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID, Tc) | 95 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max @ VGS=10V | 5.2 mΞ© | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage VGS(th) typ | 2.5-3.0 V | β |
| Total Power Dissipation (Tc) | 83 W | β |
| Total Power Dissipation (Ta) | 2.5 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| Continuous Drain Current (ID, Tc=25C) | β | 73 A |
| Continuous Drain Current (ID, Ta=25C) | β | 16 A |
| On-State Resistance RDS(on) max @ VGS=10V | β | 5.9 mOhm |
| Power Dissipation (Tc=25C) | β | 50 W |
| Power Dissipation (Ta=25C) | β | 2.5 W |
| Gate-Source Threshold Voltage VGS(th) | β | 1.2 V to 2.0 V (typ) |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg total, typical nC] |
| Operating Temperature Range | β | -55 C to +150 C |
| REACH Status | β | Compliant |
| Channel Type | β | N-Channel |