BSC052N08NS5ATMA1 vs BSC0902NSATMA1 Comparison

Detailed side-by-side comparison of BSC052N08NS5ATMA1 by Infineon and BSC0902NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC052N08NS5ATMA1

BSC052N08NS5ATMA1 - 80V 95A 5.2mΞ© OptiMOS 5 N-FET | Infineon

BSC052N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSC052N08NS5ATMA1 BSC0902NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.52 $0.78
Manufacturer Infineon Technologies β€”
Part Number BSC052N08NS5ATMA1 β€”
Technology OptiMOS 5 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 80 V 30 V
Continuous Drain Current (ID, Tc) 95 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) max @ VGS=10V 5.2 mΞ© β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage VGS(th) typ 2.5-3.0 V β€”
Total Power Dissipation (Tc) 83 W β€”
Total Power Dissipation (Ta) 2.5 W β€”
Operating Junction Temperature -55C to +150C β€”
Package PG-TDSON-8 (SuperSO8) 5x6 mm PG-TDSON-8-6 (SuperSO8)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant β€”
MSL Level 1 (unlimited) β€”
Continuous Drain Current (ID, Ta) β€” 24 A
Pulsed Drain Current (IDM, Tc) β€” 100 A
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 48 W
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max β€” [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max β€” [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) β€” [DATA_NEEDED: Qg typical]
Operating Temperature Range β€” -55C to +150C (Tj)
Qualification β€” JEDEC qualified for target applications
RoHS Compliance β€” Compliant (Pb-free lead plating)
Halogen-Free β€” Yes, per IEC 61249-2-21
Avalanche Rated β€” Yes (100% avalanche tested)

Datasheets & Resources

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