BSC052N08NS5ATMA1 vs BSC0902NSIATMA1 Comparison
Detailed side-by-side comparison of BSC052N08NS5ATMA1 by Infineon and BSC0902NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC052N08NS5ATMA1
BSC052N08NS5ATMA1 - 80V 95A 5.2mΞ© OptiMOS 5 N-FET | Infineon
BSC052N08NS5ATMA1 β ActiveInfineon
BSC0902NSIATMA1
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
BSC0902NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC052N08NS5ATMA1 | BSC0902NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC052N08NS5ATMA1 | β |
| Technology | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tc) | 95 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | 5.2 mΞ© | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage VGS(th) typ | 2.5-3.0 V | β |
| Total Power Dissipation (Tc) | 83 W | β |
| Total Power Dissipation (Ta) | 2.5 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-6 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Product Family | β | OptiMOS 30V |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TA=25C | β | 23 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| On-State Resistance RDS(on) Max at VGS=10V | β | 2.8 mOhm |
| Gate Charge QG(0V..10V) | β | 24 nC |
| Output Charge QOSS | β | 17 nC |
| Power Dissipation (TA) | β | 2.5 W |
| Power Dissipation (TC) | β | 48 W |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Built-in Diode | β | Yes (single with built-in diode) |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |