BSC054N04NSGATMA1 vs BSC035N04LSGATMA1 Comparison

Detailed side-by-side comparison of BSC054N04NSGATMA1 by Infineon and BSC035N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC054N04NSGATMA1

BSC054N04NSGATMA1 - 40V 81A OptiMOS 3 N-Ch MOSFET | Infineon

BSC054N04NSGATMA1 βœ“ Active
Infineon
BSC035N04LSGATMA1

BSC035N04LSGATMA1 - 40V 100A 3.5mΞ© OptiMOS 3 N-MOSFET | Infineon

BSC035N04LSGATMA1 βœ“ Active

Specification Comparison

Parameter BSC054N04NSGATMA1 BSC035N04LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.48
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC054N04NSGATMA1 β€”
Technology OptiMOS 3 (N-Channel Trench MOSFET) β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Tc=25C 81 A β€”
Continuous Drain Current (ID) at Ta=25C 17 A β€”
On-Resistance RDS(on) max at VGS=10V 5.4 mOhm β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Power Dissipation at Tc=25C 57 W β€”
Power Dissipation at Ta=25C 2.5 W β€”
Operating Temperature Range -55C to +150C β€”
Package PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-1 (8-pin, exposed drain pad)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) β€”
RoHS Status Compliant Compliant
Gate Drive Voltage (recommended) 10 V β€”
Lead-Free Reflow Yes β€”
Series β€” OptiMOS 3
FET Type β€” N-Channel
Continuous Drain Current (ID) at Tc=25Β°C β€” 100 A
Continuous Drain Current (ID) at Ta=25Β°C β€” 21 A
RDS(on) Max at VGS=10V β€” 3.5 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 1.7 V (typ)
Power Dissipation (Pd) at Ta=25Β°C β€” 2.5 W
Power Dissipation (Pd) at Tc=25Β°C β€” 69 W
Operating Junction Temperature β€” -55Β°C to +150Β°C
Lead-Free β€” Yes

Datasheets & Resources

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