BSC054N04NSGATMA1 vs IPD038N06NF2SATMA1 Comparison
Detailed side-by-side comparison of BSC054N04NSGATMA1 by Infineon and IPD038N06NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC054N04NSGATMA1
BSC054N04NSGATMA1 - 40V 81A OptiMOS 3 N-Ch MOSFET | Infineon
BSC054N04NSGATMA1 β Active
Specification Comparison
| Parameter | BSC054N04NSGATMA1 | IPD038N06NF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.95 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC054N04NSGATMA1 | β |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at Tc=25C | 81 A | β |
| Continuous Drain Current (ID) at Ta=25C | 17 A | β |
| On-Resistance RDS(on) max at VGS=10V | 5.4 mOhm | β |
| Gate-Source Voltage (VGS) max | Β±20 V | Β±20 V |
| Power Dissipation at Tc=25C | 57 W | β |
| Power Dissipation at Ta=25C | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Gate Drive Voltage (recommended) | 10 V | β |
| Lead-Free Reflow | Yes | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TC=25Β°C | β | 120 A |
| Continuous Drain Current (ID) at TA=25Β°C | β | 20 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | β | 3.85 mΞ© max |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Typical Gate Charge (Qg) at VGS=10V | β | 68 nC |
| Input Capacitance (Ciss) | β | 6700 pF |
| Output Capacitance (Coss) | β | 670 pF |
| Reverse Transfer Capacitance (Crss) | β | 43 pF |
| Power Dissipation (PD) at TA=25Β°C | β | 3 W |
| Power Dissipation (PD) at TC=25Β°C | β | 107 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Channel Mode | β | Enhancement |