BSC059N04LSGATMA1 vs IAUZ40N06S5L050ATMA1 Comparison
Detailed side-by-side comparison of BSC059N04LSGATMA1 by Infineon and IAUZ40N06S5L050ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 β ActiveSpecification Comparison
| Parameter | BSC059N04LSGATMA1 | IAUZ40N06S5L050ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.71 |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | OptiMOS 5 (super-junction N-channel) |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tc=25C) | 73 A | β |
| Continuous Drain Current (ID, Ta=25C) | 16 A | β |
| On-State Resistance RDS(on) max @ VGS=10V | 5.9 mOhm | β |
| Power Dissipation (Tc=25C) | 50 W | β |
| Power Dissipation (Ta=25C) | 2.5 W | β |
| Gate-Source Threshold Voltage VGS(th) | 1.2 V to 2.0 V (typ) | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total, typical nC] | β |
| Operating Temperature Range | -55 C to +150 C | β |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TSDSON-8-33 (TSDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| REACH Status | Compliant | β |
| Channel Type | N-Channel | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 60 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | [DATA_NEEDED: continuous drain current at Tc=25C] |
| Drain Current at T<sub>j</sub> | β | 90 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | β | 5 mΞ© |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | β | 6.4 mΞ© |
| Gate Threshold Voltage V<sub>GS(th)</sub> | β | 2.2 V at 29 Β΅A |
| Total Gate Charge Q<sub>G</sub> | β | 28.2 nC |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | 71 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Automotive Qualification | β | AEC-Q100 qualified |