BSC060P03NS3EGATMA1 vs BSC084P03NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC060P03NS3EGATMA1 by Infineon and BSC084P03NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC060P03NS3EGATMA1

BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΞ© 100A OptiMOS | Infineon

BSC060P03NS3EGATMA1 βœ“ Active
Infineon
BSC084P03NS3GATMA1

BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon

BSC084P03NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC060P03NS3EGATMA1 BSC084P03NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.24
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -30 V -30 V
Continuous Drain Current (Ta) 17.7 A 14.9 A
Continuous Drain Current (Tc) 100 A 78.6 A
On-State Resistance RDS(on) max @ VGS=10V 6 mΞ© β€”
Gate Threshold Voltage VGS(th) typ -2.5 V β€”
Total Gate Charge Qg @ VGS=10V 81 nC β€”
Input Capacitance Ciss 6.02 nF β€”
Output Capacitance Coss 2.81 nF β€”
Reverse Transfer Capacitance Crss 220 pF β€”
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 83 W 69 W
Operating Temperature Range -55Β°C to +150Β°C -55C to +150C
Package PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-5 (SuperSO8 5x6)
Technology OptiMOSβ„’ P-channel Trench β€”
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Polarity / Channel Type β€” P-Channel
Rds(on) max @ VGS = -10 V β€” 6.1 mOhm
Rds(on) max @ VGS = -2.5 V β€” [DATA_NEEDED: Rds(on) at 2.5V]
Gate Threshold Voltage (VGS(th) typ) β€” -1.7 V
Total Gate Charge (Qg) β€” 58 nC @ VGS = -10 V
Input Capacitance (Ciss) β€” 3.19 nF
Output Capacitance (Coss) β€” 110 pF
Reverse Transfer Capacitance (Crss) β€” 1.52 nF
Technology Family β€” OptiMOS P3
MSL Level β€” 1 (unlimited)

Datasheets & Resources

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