BSC060P03NS3EGATMA1 vs IRFR5410TRPBF Comparison

Detailed side-by-side comparison of BSC060P03NS3EGATMA1 by Infineon and IRFR5410TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC060P03NS3EGATMA1

BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΞ© 100A OptiMOS | Infineon

BSC060P03NS3EGATMA1 βœ“ Active

Specification Comparison

Parameter BSC060P03NS3EGATMA1 IRFR5410TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.71
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -30 V -100 V
Continuous Drain Current (Ta) 17.7 A β€”
Continuous Drain Current (Tc) 100 A β€”
On-State Resistance RDS(on) max @ VGS=10V 6 mΞ© β€”
Gate Threshold Voltage VGS(th) typ -2.5 V β€”
Total Gate Charge Qg @ VGS=10V 81 nC β€”
Input Capacitance Ciss 6.02 nF β€”
Output Capacitance Coss 2.81 nF β€”
Reverse Transfer Capacitance Crss 220 pF β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 83 W β€”
Operating Temperature Range -55Β°C to +150Β°C -55 Β°C to +150 Β°C (TJ)
Package PG-TDSON-8-1 (SuperSO8 5x6) TO-252AA (DPAK), surface mount
Technology OptiMOSβ„’ P-channel Trench HEXFET (advanced process, Gen 5)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant β€”
Continuous Drain Current (ID) at TC = 25 Β°C β€” -13 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V β€” 205 mΞ©
Gate-Source Voltage (VGS) max β€” Β±20 V
Total Gate Charge (Qg) typ β€” 70 nC
Power Dissition (PD) at TC = 25 Β°C β€” 66 W
Avalanche Rated β€” Yes (fully avalanche rated)
Lead-Free / RoHS Status β€” Lead-free, RoHS compliant (PBF suffix)
MSL Level β€” [DATA_NEEDED: MSL rating]
RDS(on) Test Conditions β€” VGS = -10 V, ID = -7.0 A

Datasheets & Resources

Browse All Products Create BOM Request Quote