BSC066N06NSATMA1 vs BSC052N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC066N06NSATMA1 by Infineon and BSC052N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC066N06NSATMA1

BSC066N06NSATMA1 - 60V N-Ch MOSFET 6.6mΩ OptiMOS | Infineon

BSC066N06NSATMA1 ✓ Active
Infineon
BSC052N08NS5ATMA1

BSC052N08NS5ATMA1 - 80V 95A 5.2mΩ OptiMOS 5 N-FET | Infineon

BSC052N08NS5ATMA1 ✓ Active

Specification Comparison

Parameter BSC066N06NSATMA1 BSC052N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.52
Drain-Source Voltage (VDS) 60 V 80 V
Continuous Drain Current (ID) at TC=25°C 64 A
Continuous Drain Current (ID) at TC=100°C 45 A
Pulsed Drain Current (IDM) 256 A [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 6.6 mΩ (max)
Gate Threshold Voltage (VGS(th)) 1.7 V (typ)
Total Gate Charge (Qg) 26 nC (typ)
Power Dissipation (PD) at TC=25°C 46 W
Power Dissipation (PD) at TA=25°C 2.5 W
Thermal Resistance, Junction-to-Case (RθJC) 1.3 °C/W
Operating Junction Temperature -55°C to +150°C -55C to +150C
Package PG-TDSON-8-6 (TDSON EP) PG-TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
MSL Level 1 1 (unlimited)
RoHS Status Compliant Compliant
Technology OptiMOS 5 60 V trench-gate OptiMOS 5
Manufacturer Infineon Technologies
Part Number BSC052N08NS5ATMA1
Transistor Type N-Channel MOSFET
Continuous Drain Current (ID, Tc) 95 A
On-Resistance RDS(on) max @ VGS=10V 5.2 mΩ
Gate-Source Voltage (VGS) ±20 V
Gate Threshold Voltage VGS(th) typ 2.5-3.0 V
Total Power Dissipation (Tc) 83 W
Total Power Dissipation (Ta) 2.5 W

Datasheets & Resources

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