BSC066N06NSATMA1 vs BSC076N06NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC066N06NSATMA1 by Infineon and BSC076N06NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC066N06NSATMA1

BSC066N06NSATMA1 - 60V N-Ch MOSFET 6.6mΩ OptiMOS | Infineon

BSC066N06NSATMA1 ✓ Active

Specification Comparison

Parameter BSC066N06NSATMA1 BSC076N06NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.65
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at TC=25°C 64 A
Continuous Drain Current (ID) at TC=100°C 45 A
Pulsed Drain Current (IDM) 256 A
Gate-Source Voltage (VGS) max ±20 V ±20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 6.6 mΩ (max)
Gate Threshold Voltage (VGS(th)) 1.7 V (typ) 2.0 V to 3.5 V
Total Gate Charge (Qg) 26 nC (typ) [DATA_NEEDED: Qg value]
Power Dissipation (PD) at TC=25°C 46 W
Power Dissipation (PD) at TA=25°C 2.5 W
Thermal Resistance, Junction-to-Case (RθJC) 1.3 °C/W
Operating Junction Temperature -55°C to +150°C
Package PG-TDSON-8-6 (TDSON EP) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 1 (unlimited)
RoHS Status Compliant
Technology OptiMOS 5 60 V trench-gate N-Channel Trench MOSFET
Manufacturer Infineon Technologies
Product Family OptiMOS 3
Continuous Drain Current (ID) at TC=25C 50 A
On-Resistance RDS(on) max at VGS=10V 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΩ
Power Dissipation (Ta) 2.5 W
Power Dissipation (Tc) 69 W
Operating Temperature Range -55C to +150C
RoHS Compliance Compliant
Halogen-Free Yes (per Infineon product page)

Datasheets & Resources

Browse All Products Create BOM Request Quote