BSC066N06NSATMA1 vs BSC0906NSATMA1 Comparison

Detailed side-by-side comparison of BSC066N06NSATMA1 by Infineon and BSC0906NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC066N06NSATMA1

BSC066N06NSATMA1 - 60V N-Ch MOSFET 6.6mΞ© OptiMOS | Infineon

BSC066N06NSATMA1 βœ“ Active
Infineon
BSC0906NSATMA1

BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon

BSC0906NSATMA1 βœ“ Active

Specification Comparison

Parameter BSC066N06NSATMA1 BSC0906NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.48
Drain-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID) at TC=25Β°C 64 A β€”
Continuous Drain Current (ID) at TC=100Β°C 45 A β€”
Pulsed Drain Current (IDM) 256 A β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 6.6 mΞ© (max) β€”
Gate Threshold Voltage (VGS(th)) 1.7 V (typ) [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) 26 nC (typ) [DATA_NEEDED: Qg @ VGS=10V]
Power Dissipation (PD) at TC=25Β°C 46 W β€”
Power Dissipation (PD) at TA=25Β°C 2.5 W β€”
Thermal Resistance, Junction-to-Case (RΞΈJC) 1.3 Β°C/W β€”
Operating Junction Temperature -55Β°C to +150Β°C β€”
Package PG-TDSON-8-6 (TDSON EP) PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 β€”
RoHS Status Compliant Compliant
Technology OptiMOS 5 60 V trench-gate OptiMOS
FET Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID) at Ta β€” 18 A
Continuous Drain Current (ID) at Tc β€” 63 A
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 30 W
RDS(on) max (typical reference) β€” [DATA_NEEDED: RDS(on) max @ VGS=10V]
Operating Temperature Range β€” -55C to +150C (junction, typical)
Pin Count β€” 8

Datasheets & Resources

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