BSC066N06NSATMA1 vs BSZ065N06LS5ATMA1 Comparison
Detailed side-by-side comparison of BSC066N06NSATMA1 by Infineon and BSZ065N06LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC066N06NSATMA1 | BSZ065N06LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.62 |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 64 A | — |
| Continuous Drain Current (ID) at TC=100°C | 45 A | — |
| Pulsed Drain Current (IDM) | 256 A | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 6.6 mΩ (max) | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | 2.3 V |
| Total Gate Charge (Qg) | 26 nC (typ) | 13 nC @ VGS=4.5 V |
| Power Dissipation (PD) at TC=25°C | 46 W | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Thermal Resistance, Junction-to-Case (RθJC) | 1.3 °C/W | — |
| Operating Junction Temperature | -55°C to +150°C | — |
| Package | PG-TDSON-8-6 (TDSON EP) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | — |
| RoHS Status | Compliant | Compliant |
| Technology | OptiMOS 5 60 V trench-gate | OptiMOS™ 5 logic-level |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 5 |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) Max | — | 65 A |
| Drain Current @ Tc (ID, Tc=25°C) | — | 40 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 6.5 mΩ |
| Power Dissipation (PD) Max | — | 46 W |
| Input Capacitance (Ciss) | — | 1.8 nF |
| Operating Temperature Range | — | -55°C to +150°C |