BSC070N10NS5ATMA1 vs BSC097N06NSATMA1 Comparison

Detailed side-by-side comparison of BSC070N10NS5ATMA1 by Infineon and BSC097N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC070N10NS5ATMA1 BSC070N10NS5ATMA1 - 100V 7mOhm OptiMOS 5 N-MOSFET | Infineon

BSC070N10NS5ATMA1 - 100V 7mOhm OptiMOS 5 N-MOSFET | Infineon

BSC070N10NS5ATMA1 βœ“ Active
Infineon
BSC097N06NSATMA1 BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon

BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon

BSC097N06NSATMA1 βœ“ Active

Specification Comparison

Parameter BSC070N10NS5ATMA1 BSC097N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.38
Technology OptiMOS 5 (N-channel trench) OptiMOS 5 (Trench)
Drain-Source Voltage (VDS) max 100 V β€”
Continuous Drain Current (ID) at TC=25C 80 A β€”
RDS(on) max @ VGS=10V 7 mOhm β€”
Gate-Source Voltage (VGS) max 20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] β€”
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] β€”
Power Dissition at TC=25C (Ptot) 83 W β€”
Power Dissipation at TA=25C 2.5 W β€”
Operating Junction Temperature Range -55 C to +150 C β€”
Package PG-TDSON-8-7 (SuperSO8 5x6 mm) β€”
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) 1 (Unlimited)
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Typical Application Synchronous rectification in SMPS β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 5
Part Status β€” Active
FET Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at Tc=25C β€” 46 A
Continuous Drain Current (ID) at Ta=25C β€” [DATA_NEEDED: ID at Ta=25C PCB-mounted]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM peak value]
RDS(on) max at VGS=10 V β€” 9.7 mOhm
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg typ) β€” [DATA_NEEDED: total gate charge Qg]
Power Dissipation at Ta=25C β€” 2.5 W
Power Dissipation at Tc=25C β€” 36 W
Operating Junction Temperature β€” -55C to +150C
Package / Case β€” PG-TDSON-8-6 (SuperSO8 5x6 mm)
Avalanche Rated β€” Yes (EAS per datasheet)

Datasheets & Resources

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