BSC070N10NS5ATMA1 vs BSC118N10NSGATMA1 Comparison
Detailed side-by-side comparison of BSC070N10NS5ATMA1 by Infineon and BSC118N10NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC118N10NSGATMA1
BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon
BSC118N10NSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC070N10NS5ATMA1 | BSC118N10NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.78 |
| Technology | OptiMOS 5 (N-channel trench) | Trench MOSFET |
| Drain-Source Voltage (VDS) max | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 80 A | β |
| RDS(on) max @ VGS=10V | 7 mOhm | β |
| Gate-Source Voltage (VGS) max | 20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | β |
| Power Dissition at TC=25C (Ptot) | 83 W | β |
| Power Dissipation at TA=25C | 2.5 W | β |
| Operating Junction Temperature Range | -55 C to +150 C | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Typical Application | Synchronous rectification in SMPS | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 2 |
| FET Type | β | N-Channel |
| Mode | β | Enhancement (Normal Level) |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Ta=25C | β | 11 A |
| Continuous Drain Current (ID) at Tc=25C | β | 71 A |
| Power Dissipation (PD) at Tc=25C | β | 114 W |
| Operating Junction Temperature | β | -55 C to +150 C |
| Lead Plating | β | Pb-free |
| Halogen-Free | β | Yes |
| JEDEC Qualification | β | Qualified per target application |
| Target Application | β | High-frequency SMPS, synchronous rectification |
| Gate Charge x RDS(on) FOM | β | Excellent (per datasheet) |