BSC070N10NS5ATMA1 vs IPB027N10N3GATMA1 Comparison

Detailed side-by-side comparison of BSC070N10NS5ATMA1 by Infineon and IPB027N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC070N10NS5ATMA1 BSC070N10NS5ATMA1 - 100V 7mOhm OptiMOS 5 N-MOSFET | Infineon

BSC070N10NS5ATMA1 - 100V 7mOhm OptiMOS 5 N-MOSFET | Infineon

BSC070N10NS5ATMA1 βœ“ Active
Infineon
IPB027N10N3GATMA1 IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΞ© | Infineon

IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΞ© | Infineon

IPB027N10N3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC070N10NS5ATMA1 IPB027N10N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $1.62
Technology OptiMOS 5 (N-channel trench) OptiMOS 3 (Trench MOSFET)
Drain-Source Voltage (VDS) max 100 V β€”
Continuous Drain Current (ID) at TC=25C 80 A β€”
RDS(on) max @ VGS=10V 7 mOhm β€”
Gate-Source Voltage (VGS) max 20 V Β±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: typical and min/max VGS(th) values]
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] [DATA_NEEDED: typical Qg at VGS=10V]
Power Dissition at TC=25C (Ptot) 83 W β€”
Power Dissipation at TA=25C 2.5 W β€”
Operating Junction Temperature Range -55 C to +150 C β€”
Package PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TO263-3 (D2PAK)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: moisture sensitivity level]
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Typical Application Synchronous rectification in SMPS β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at TC=25Β°C β€” 120 A
Power Dissipation (PD) at TC=25Β°C β€” 300 W
On-Resistance RDS(on) max at VGS=10V β€” 3.4 mΞ©
On-Resistance RDS(on) typical at VGS=10V β€” 2.7 mΞ©
Operating Temperature Range β€” -55Β°C to +175Β°C (TJ)
Thermal Resistance Junction-to-Case (RΞΈJC) β€” [DATA_NEEDED: exact Β°C/W value]
Single Pulse Avalanche Energy (EAS) β€” [DATA_NEEDED: datasheet EAS figure]

Datasheets & Resources

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