BSC072N08NS5ATMA1 vs BSC059N04LS6ATMA1 Comparison
Detailed side-by-side comparison of BSC072N08NS5ATMA1 by Infineon and BSC059N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC072N08NS5ATMA1 - 80V 74A N-Channel OptiMOS 5 MOSFET | Infineon
BSC072N08NS5ATMA1 β ActiveInfineon
BSC059N04LS6ATMA1
BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon
BSC059N04LS6ATMA1 β ActiveSpecification Comparison
| Parameter | BSC072N08NS5ATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.74 |
| Manufacturer | Infineon Technologies | β |
| Part Family | BSC072N08NS5 (OptiMOS 5) | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 5 | OptiMOS 6 (N-channel MOSFET) |
| Drain-Source Voltage (VDS) Max | 80 V | β |
| Continuous Drain Current (ID) at Tc | 74 A | β |
| Drain-Source On-Resistance (RDS(on)) Max | 7.2 mOhm at VGS=10V | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 69 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: full min/max operating Tj] | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Shipping Pack | Tape & Reel (ATMA1) | β |
| Standard Pack Quantity | 5000 | β |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TA=25C | β | 17 A |
| Continuous Drain Current (ID) at TC=25C | β | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | β | 59 A |
| On-Resistance RDS(on) max | β | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | β | 3 W |
| Total Power Dissipation at TC=25C | β | 38 W |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Diode Continuous Forward Current (IS) | β | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | β | 236 A at TC=25C |
| Lead-Free | β | Yes |