BSC072N08NS5ATMA1 vs IPT015N10N5ATMA1 Comparison
Detailed side-by-side comparison of BSC072N08NS5ATMA1 by Infineon and IPT015N10N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC072N08NS5ATMA1 - 80V 74A N-Channel OptiMOS 5 MOSFET | Infineon
BSC072N08NS5ATMA1 β ActiveInfineon
IPT015N10N5ATMA1
IPT015N10N5ATMA1 - 100V 300A 1.5mΞ© OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC072N08NS5ATMA1 | IPT015N10N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $2.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | BSC072N08NS5 (OptiMOS 5) | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 5 | OptiMOSβ’ 5 |
| Drain-Source Voltage (VDS) Max | 80 V | 100 V |
| Continuous Drain Current (ID) at Tc | 74 A | β |
| Drain-Source On-Resistance (RDS(on)) Max | 7.2 mOhm at VGS=10V | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 69 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-HSOF-8-1 (TOLL) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: full min/max operating Tj] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | [DATA_NEEDED: Qg at VGS=10V] |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Shipping Pack | Tape & Reel (ATMA1) | β |
| Standard Pack Quantity | 5000 | β |
| Part Number | β | IPT015N10N5ATMA1 |
| Continuous Drain Current (ID, Tc) | β | 300 A |
| On-Resistance RDS(on) Max | β | 1.5 mΞ© |
| Power Dissipation (PD, Tc) | β | 375 W |
| Configuration | β | Single |
| Operating Temperature | β | -55Β°C to +175Β°C |
| Gate Threshold VGS(th) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| Output Capacitance (Coss) | β | Reduced up to 44% vs prior generation (per manufacturer claim) |
| RDS(on) Improvement vs Prior Generation | β | Up to 43% reduction |
| Packaging | β | Tape & Reel |