BSC076N04NDATMA1 vs BSC0901NSIATMA1 Comparison
Detailed side-by-side comparison of BSC076N04NDATMA1 by Infineon and BSC0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveInfineon
BSC0901NSIATMA1
BSC0901NSIATMA1 - 30V 100A OptiMOS N-Ch MOSFET | Infineon
BSC0901NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC076N04NDATMA1 | BSC0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.38 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3 | β |
| Configuration | Dual N-Channel (independent MOSFETs) | β |
| Drain-Source Voltage (VDS) max | 40 V | β |
| Continuous Drain Current (ID) | 20 A (Tc) | β |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | β |
| On-Resistance RDS(on) max | 7.6 mOhm | β |
| Power Dissipation (Ta) | 2.3 W | β |
| Power Dissipation (Tc) | 65 W | β |
| Technology | Trench MOSFET (OptiMOS 3) | OptiMOS 25V N-Channel Power MOSFET |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package / Case | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | β |
| FET Type | 2x N-Channel MOSFET array | β |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta=25C | β | 28 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10V | β | 2.0 mOhm typical |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | β | 2.2 V max |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge nC] |
| Power Dissipation (PD) at Ta=25C | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 69 W |
| Operating Temperature Range | β | -55 C to +150 C |
| Package | β | PG-TDSON-8-6 (5x6 mm with exposed pad) |
| Pin Count | β | 8 |
| MSL Level | β | 1 |
| RoHS Status | β | Compliant |
| Halogen-Free | β | Yes |