BSC076N06NS3GATMA1 vs BSC060N10NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC076N06NS3GATMA1 by Infineon and BSC060N10NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 β ActiveInfineon
BSC060N10NS3GATMA1
BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon
BSC060N10NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC076N06NS3GATMA1 | BSC060N10NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | β |
| Technology | N-Channel Trench MOSFET | OptiMOS 3 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 50 A | β |
| On-Resistance RDS(on) max at VGS=10V | 7.6 mΞ© | β |
| On-Resistance RDS(on) max at VGS=4.5V | 10.4 mΞ© | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 69 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| RoHS Compliance | Compliant | β |
| Halogen-Free | Yes (per Infineon product page) | [DATA_NEEDED: halogen status] |
| Part Family | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, Ta) | β | 14.9 A |
| Continuous Drain Current (ID, Tc) | β | 90 A |
| On-Resistance RDS(on) Max @ VGS=10V | β | 6 mOhm |
| Power Dissipation (PD, Tc=25C) | β | 125 W |
| Gate Threshold Voltage VGS(th) | β | 2.0 V to 3.5 V |
| Operating Junction Temperature | β | -55 C to +150 C |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Gate Charge (Qg, typ) | β | [DATA_NEEDED: Qg value] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss value] |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS value] |