BSC076N06NS3GATMA1 vs IAUT300N08S5N012ATMA2 Comparison
Detailed side-by-side comparison of BSC076N06NS3GATMA1 by Infineon and IAUT300N08S5N012ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 ✓ ActiveInfineon
IAUT300N08S5N012ATMA2
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ ActiveSpecification Comparison
| Parameter | BSC076N06NS3GATMA1 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $2.20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | OptiMOS™-5 80 V |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25C | 50 A | — |
| On-Resistance RDS(on) max at VGS=10V | 7.6 mΩ | — |
| On-Resistance RDS(on) max at VGS=4.5V | 10.4 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 69 W | — |
| Operating Temperature Range | -55C to +150C | -55 °C to +175 °C (TJ) |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: MSL level] |
| RoHS Compliance | Compliant | Compliant |
| Halogen-Free | Yes (per Infineon product page) | — |
| Transistor Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 300 A |
| Pulsed Drain Current (IDM) | — | 1200 A (per datasheet, typical) |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.2 mΩ |
| Maximum Power Dissipation (PD, Tc) | — | 375 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Automotive Qualification | — | AEC-Q101 qualified |