BSC077N12NS3GATMA1 vs BSC060N10NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC077N12NS3GATMA1 by Infineon and BSC060N10NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC077N12NS3GATMA1
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΞ© | Infineon
BSC077N12NS3GATMA1 β ActiveInfineon
BSC060N10NS3GATMA1
BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon
BSC060N10NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC077N12NS3GATMA1 | BSC060N10NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) | OptiMOS 3 |
| Transistor Type | N-Channel MOSFET (enhancement-mode trench) | β |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Continuous Drain Current (ID) at Ta | 13.4 A | β |
| Continuous Drain Current (ID) at Tc | 98 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | β |
| Power Dissipation (PD) at Tc | 139 W | β |
| Operating Junction Temperature | -55C to +150C | -55 C to +150 C |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, Ta) | β | 14.9 A |
| Continuous Drain Current (ID, Tc) | β | 90 A |
| On-Resistance RDS(on) Max @ VGS=10V | β | 6 mOhm |
| Power Dissipation (PD, Tc=25C) | β | 125 W |
| Gate Threshold Voltage VGS(th) | β | 2.0 V to 3.5 V |
| Technology | β | OptiMOS 3 (Trench MOSFET) |
| Lead-Free | β | Yes |
| Halogen-Free | β | [DATA_NEEDED: halogen status] |
| Gate Charge (Qg, typ) | β | [DATA_NEEDED: Qg value] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss value] |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS value] |