BSC077N12NS3GATMA1 vs BSC093N15NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC077N12NS3GATMA1 by Infineon and BSC093N15NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC077N12NS3GATMA1
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΞ© | Infineon
BSC077N12NS3GATMA1 β ActiveInfineon
BSC093N15NS5ATMA1 - 150V 9.3mΞ© 87A OptiMOS 5 N-MOSFET | Infineon
BSC093N15NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC077N12NS3GATMA1 | BSC093N15NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $1.83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) | β |
| Transistor Type | N-Channel MOSFET (enhancement-mode trench) | β |
| Drain-Source Voltage (VDS) | 120 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Continuous Drain Current (ID) at Ta | 13.4 A | β |
| Continuous Drain Current (ID) at Tc | 98 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | β |
| Power Dissipation (PD) at Tc | 139 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | SuperSO8 5x6 (PG-TDSON-8-7) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | β |
| Technology | β | OptiMOS 5 150V |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 150 V |
| Continuous Drain Current (ID) at TC | β | 87 A |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | β | 9.3 mΞ© |
| Power Dissipation (PD) at TC | β | 139 W |
| Gate Drive Voltage (VGS) Recommended | β | 10 V |
| Operating Temperature Range | β | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge Qg] |
| Halogen Free | β | [DATA_NEEDED: halogen free status] |