BSC077N12NS3GATMA1 vs BSC117N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC077N12NS3GATMA1 by Infineon and BSC117N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC077N12NS3GATMA1
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΞ© | Infineon
BSC077N12NS3GATMA1 β ActiveInfineon
BSC117N08NS5ATMA1
BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon
BSC117N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC077N12NS3GATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) | β |
| Transistor Type | N-Channel MOSFET (enhancement-mode trench) | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 120 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Continuous Drain Current (ID) at Ta | 13.4 A | β |
| Continuous Drain Current (ID) at Tc | 98 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | β |
| Power Dissipation (PD) at Tc | 139 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | 8 |
| MSL Level | 1 | 1 |
| RoHS Status | Compliant | Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | β |
| Part Number | β | BSC117N08NS5ATMA1 |
| Technology | β | OptiMOS 5 |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Continuous Drain Current (ID) max | β | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | β | 11.7 mOhm |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 50 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| Operating Temperature Range | β | -55 C to +150 C (typical MOSFET junction) |
| Lead-Free | β | Yes |