BSC077N12NS3GATMA1 vs ISC0703NLSATMA1 Comparison

Detailed side-by-side comparison of BSC077N12NS3GATMA1 by Infineon and ISC0703NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC077N12NS3GATMA1

BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΞ© | Infineon

BSC077N12NS3GATMA1 βœ“ Active
Infineon
ISC0703NLSATMA1 ISC0703NLSATMA1 - 60V N-Ch MOSFET, 57A, PG-TDSON-8 | Infineon

ISC0703NLSATMA1 - 60V N-Ch MOSFET, 57A, PG-TDSON-8 | Infineon

ISC0703NLSATMA1 βœ“ Active

Specification Comparison

Parameter BSC077N12NS3GATMA1 ISC0703NLSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.71 $0.51
Manufacturer Infineon Technologies β€”
Part Family OptiMOS 3 (120 V) β€”
Transistor Type N-Channel MOSFET (enhancement-mode trench) β€”
Drain-Source Voltage (VDS) 120 V 60 V
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] β€”
Continuous Drain Current (ID) at Ta 13.4 A β€”
Continuous Drain Current (ID) at Tc 98 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] β€”
On-State Resistance RDS(on) max @ VGS=10V 7.7 mΞ© β€”
Gate Threshold Voltage VGS(th) typ 2.5 V β€”
Total Gate Charge Qg typ [DATA_NEEDED: Qg] β€”
Power Dissipation (PD) at Tc 139 W β€”
Operating Junction Temperature -55C to +150C β€”
Package PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8 (5x6 mm)
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
MSL Level 1 [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Automotive Grade Yes (per Infineon part number suffix / datasheet) β€”
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID) at Ta=25C β€” 13 A
Continuous Drain Current (ID) at Tc=25C β€” 57 A
Power Dissipation (PD) at Ta=25C β€” 3 W
Power Dissipation (PD) at Tc=25C β€” 44 W
Technology β€” Trench MOSFET (OptiMOS family)
Operating Temperature Range β€” -55C to +150C (junction)
Standard Package Quantity β€” 5,000 (reel)
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical and min/max]
On-Resistance (RDS(on)) β€” [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Avalanche Energy (EAS) β€” [DATA_NEEDED: EAS rating]

Datasheets & Resources

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