BSC077N12NS3GATMA1 vs ISC0703NLSATMA1 Comparison
Detailed side-by-side comparison of BSC077N12NS3GATMA1 by Infineon and ISC0703NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC077N12NS3GATMA1
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΞ© | Infineon
BSC077N12NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC077N12NS3GATMA1 | ISC0703NLSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.51 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS 3 (120 V) | β |
| Transistor Type | N-Channel MOSFET (enhancement-mode trench) | β |
| Drain-Source Voltage (VDS) | 120 V | 60 V |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Continuous Drain Current (ID) at Ta | 13.4 A | β |
| Continuous Drain Current (ID) at Tc | 98 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | β |
| Power Dissipation (PD) at Tc | 139 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | β |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | β | 13 A |
| Continuous Drain Current (ID) at Tc=25C | β | 57 A |
| Power Dissipation (PD) at Ta=25C | β | 3 W |
| Power Dissipation (PD) at Tc=25C | β | 44 W |
| Technology | β | Trench MOSFET (OptiMOS family) |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Standard Package Quantity | β | 5,000 (reel) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS rating] |