BSC084P03NS3GATMA1 vs BSC076N06NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC084P03NS3GATMA1 by Infineon and BSC076N06NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC084P03NS3GATMA1

BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon

BSC084P03NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC084P03NS3GATMA1 BSC076N06NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.24 $0.65
Polarity / Channel Type P-Channel β€”
Drain-Source Voltage (VDS) -30 V 60 V
Continuous Drain Current (Ta) 14.9 A β€”
Continuous Drain Current (Tc) 78.6 A β€”
Rds(on) max @ VGS = -10 V 6.1 mOhm β€”
Rds(on) max @ VGS = -2.5 V [DATA_NEEDED: Rds(on) at 2.5V] β€”
Gate Threshold Voltage (VGS(th) typ) -1.7 V β€”
Total Gate Charge (Qg) 58 nC @ VGS = -10 V [DATA_NEEDED: Qg value]
Input Capacitance (Ciss) 3.19 nF β€”
Output Capacitance (Coss) 110 pF β€”
Reverse Transfer Capacitance (Crss) 1.52 nF β€”
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 69 W 69 W
Operating Temperature Range -55C to +150C -55C to +150C
Package PG-TDSON-8-5 (SuperSO8 5x6) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Technology Family OptiMOS P3 β€”
RoHS Status Compliant β€”
MSL Level 1 (unlimited) 1 (unlimited)
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 3
Technology β€” N-Channel Trench MOSFET
Continuous Drain Current (ID) at TC=25C β€” 50 A
On-Resistance RDS(on) max at VGS=10V β€” 7.6 mΞ©
On-Resistance RDS(on) max at VGS=4.5V β€” 10.4 mΞ©
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” 2.0 V to 3.5 V
RoHS Compliance β€” Compliant
Halogen-Free β€” Yes (per Infineon product page)

Datasheets & Resources

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