BSC084P03NS3GATMA1 vs BSP316PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSC084P03NS3GATMA1 by Infineon and BSP316PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC084P03NS3GATMA1
BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
BSC084P03NS3GATMA1 β ActiveInfineon
BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223
BSP316PH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSC084P03NS3GATMA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.24 | $0.21 |
| Polarity / Channel Type | P-Channel | β |
| Drain-Source Voltage (VDS) | -30 V | β |
| Continuous Drain Current (Ta) | 14.9 A | β |
| Continuous Drain Current (Tc) | 78.6 A | β |
| Rds(on) max @ VGS = -10 V | 6.1 mOhm | β |
| Rds(on) max @ VGS = -2.5 V | [DATA_NEEDED: Rds(on) at 2.5V] | β |
| Gate Threshold Voltage (VGS(th) typ) | -1.7 V | β |
| Total Gate Charge (Qg) | 58 nC @ VGS = -10 V | β |
| Input Capacitance (Ciss) | 3.19 nF | β |
| Output Capacitance (Coss) | 110 pF | β |
| Reverse Transfer Capacitance (Crss) | 1.52 nF | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 69 W | β |
| Operating Temperature Range | -55C to +150C | -55 C to +150 C (junction) |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-SOT223-4 (TO-261-4) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology Family | OptiMOS P3 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | 1 |
| FET Type | β | P-Channel |
| Drain-to-Source Voltage (VDS) | β | -100 V |
| Continuous Drain Current (ID) at TA=25C | β | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | β | 1.8 W |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Number of Pins | β | 3 + thermal tab |
| Channel Mode | β | Enhancement |
| Technology | β | SIPMOS (P-channel MOSFET) |
| Packaging | β | Tape & Reel (H6327 suffix) |