BSC0901NSATMA1 vs BSC066N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC0901NSATMA1 by Infineon and BSC066N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0901NSATMA1
BSC0901NSATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
BSC0901NSATMA1 β ActiveInfineon
BSC066N06NSATMA1
BSC066N06NSATMA1 - 60V N-Ch MOSFET 6.6mΞ© OptiMOS | Infineon
BSC066N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC0901NSATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS 30V | β |
| Technology | N-Channel Trench MOSFET (OptiMOS) | OptiMOS 5 60 V trench-gate |
| Drain-to-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Continuous Drain Current (ID) at Ta | 28 A | β |
| On-State Resistance RDS(on) Max at VGS=10V | 1.9 mOhm | β |
| On-State Resistance RDS(on) Typ at VGS=10V | [DATA_NEEDED: RDS(on) typical] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | 1.7 V (typ) |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg total] | β |
| Avalanche Energy (EAS) | 80 mJ | β |
| Power Dissipation (PD) at Tc | 69 W | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm | PG-TDSON-8-6 (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 | β |
| Built-in Body Diode | Yes | β |
| RoHS Status | Compliant | Compliant |
| Configuration | Single N-Channel with Built-in Diode | β |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 64 A |
| Continuous Drain Current (ID) at TC=100Β°C | β | 45 A |
| Pulsed Drain Current (IDM) | β | 256 A |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | β | 6.6 mΞ© (max) |
| Total Gate Charge (Qg) | β | 26 nC (typ) |
| Power Dissipation (PD) at TC=25Β°C | β | 46 W |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Thermal Resistance, Junction-to-Case (RΞΈJC) | β | 1.3 Β°C/W |
| Operating Junction Temperature | β | -55Β°C to +150Β°C |
| MSL Level | β | 1 |