BSC0901NSATMA1 vs BSC094N06LS5ATMA1 Comparison
Detailed side-by-side comparison of BSC0901NSATMA1 by Infineon and BSC094N06LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0901NSATMA1
BSC0901NSATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
BSC0901NSATMA1 β ActiveInfineon
BSC094N06LS5ATMA1
BSC094N06LS5ATMA1 - 60V 9.4mΞ© 47A N-Channel OptiMOS 5 | Infineon
BSC094N06LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC0901NSATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 30V | β |
| Technology | N-Channel Trench MOSFET (OptiMOS) | OptiMOSβ’ 5 (logic-level) |
| Drain-to-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Continuous Drain Current (ID) at Ta | 28 A | β |
| On-State Resistance RDS(on) Max at VGS=10V | 1.9 mOhm | β |
| On-State Resistance RDS(on) Typ at VGS=10V | [DATA_NEEDED: RDS(on) typical] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typ/range] |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg total] | β |
| Avalanche Energy (EAS) | 80 mJ | β |
| Power Dissipation (PD) at Tc | 69 W | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm | PG-TDSON-8-6 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 | β |
| Built-in Body Diode | Yes | β |
| RoHS Status | Compliant | Compliant |
| Configuration | Single N-Channel with Built-in Diode | β |
| Part Number | β | BSC094N06LS5ATMA1 |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 47 A |
| Continuous Drain Current (ID) at TC=100Β°C | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | β | 9.4 mΞ© |
| RDS(on) max at VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25Β°C | β | 36 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |
| MSL Level | β | [DATA_NEEDED: MSL level] |