BSC0902NSATMA1 vs BSC016N06NSATMA1 Comparison

Detailed side-by-side comparison of BSC0902NSATMA1 by Infineon and BSC016N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC0902NSATMA1 BSC016N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.65
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID, Ta) 24 A β€”
Pulsed Drain Current (IDM, Tc) 100 A β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 48 W β€”
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] β€”
RDS(on) @ VGS=10V max [DATA_NEEDED: RDS(on) at VGS=10V] β€”
RDS(on) @ VGS=4.5V max [DATA_NEEDED: RDS(on) at VGS=4.5V] β€”
Total Gate Charge (Qg typ) [DATA_NEEDED: Qg typical] β€”
Operating Temperature Range -55C to +150C (Tj) -55 Β°C to +150 Β°C
Package PG-TDSON-8-6 (SuperSO8) PG-TDSON-8 FL (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Qualification JEDEC qualified for target applications β€”
RoHS Compliance Compliant (Pb-free lead plating) β€”
Halogen-Free Yes, per IEC 61249-2-21 β€”
Avalanche Rated Yes (100% avalanche tested) β€”
Manufacturer β€” Infineon Technologies
Product Series β€” OptiMOSβ„’ 5 60V
Channel Type β€” N-Channel
Continuous Drain Current (ID, Tc) β€” 100 A
Continuous Drain Current (ID, TA) β€” 30 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.6 mΞ©
Total Gate Charge (Qg) β€” 71 nC
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (TA) β€” 2.5 W
Power Dissipation (TC) β€” 139 W
MSL Level β€” 1 (unlimited)
RoHS Status β€” Compliant
Gate Drive (recommended) β€” 10 V
Technology β€” OptiMOSβ„’ 5

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