BSC0902NSATMA1 vs BSC042NE7NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC0902NSATMA1 by Infineon and BSC042NE7NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC042NE7NS3GATMA1
BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon
BSC042NE7NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC0902NSATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $1.24 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 75 V |
| Continuous Drain Current (ID, Ta) | 24 A | β |
| Pulsed Drain Current (IDM, Tc) | 100 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 48 W | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | β |
| RDS(on) @ VGS=10V max | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| RDS(on) @ VGS=4.5V max | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical] | β |
| Operating Temperature Range | -55C to +150C (Tj) | -55C to +150C |
| Package | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | JEDEC qualified for target applications | β |
| RoHS Compliance | Compliant (Pb-free lead plating) | β |
| Halogen-Free | Yes, per IEC 61249-2-21 | β |
| Avalanche Rated | Yes (100% avalanche tested) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC042NE7NS3GATMA1 |
| Technology | β | OptiMOS 3 |
| Continuous Drain Current (ID) at Ta | β | 19 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| RDS(on) max at VGS=10V | β | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | β | 1.7 V |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 125 W |
| MSL Level | β | 1 |
| RoHS Status | β | Compliant |