BSC0902NSATMA1 vs BSC052N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC0902NSATMA1 by Infineon and BSC052N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC052N08NS5ATMA1
BSC052N08NS5ATMA1 - 80V 95A 5.2mΞ© OptiMOS 5 N-FET | Infineon
BSC052N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC0902NSATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.52 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| Continuous Drain Current (ID, Ta) | 24 A | β |
| Pulsed Drain Current (IDM, Tc) | 100 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 48 W | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | β |
| RDS(on) @ VGS=10V max | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| RDS(on) @ VGS=4.5V max | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical] | β |
| Operating Temperature Range | -55C to +150C (Tj) | β |
| Package | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8 (SuperSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | JEDEC qualified for target applications | β |
| RoHS Compliance | Compliant (Pb-free lead plating) | β |
| Halogen-Free | Yes, per IEC 61249-2-21 | β |
| Avalanche Rated | Yes (100% avalanche tested) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC052N08NS5ATMA1 |
| Technology | β | OptiMOS 5 |
| Continuous Drain Current (ID, Tc) | β | 95 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 5.2 mΞ© |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage VGS(th) typ | β | 2.5-3.0 V |
| Total Power Dissipation (Tc) | β | 83 W |
| Total Power Dissipation (Ta) | β | 2.5 W |
| Operating Junction Temperature | β | -55C to +150C |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 (unlimited) |