BSC0902NSATMA1 vs BSC0901NSATMA1 Comparison
Detailed side-by-side comparison of BSC0902NSATMA1 by Infineon and BSC0901NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC0902NSATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.78 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID, Ta) | 24 A | β |
| Pulsed Drain Current (IDM, Tc) | 100 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 48 W | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | β |
| RDS(on) @ VGS=10V max | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| RDS(on) @ VGS=4.5V max | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical] | β |
| Operating Temperature Range | -55C to +150C (Tj) | -55C to +150C |
| Package | PG-TDSON-8-6 (SuperSO8) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | JEDEC qualified for target applications | β |
| RoHS Compliance | Compliant (Pb-free lead plating) | β |
| Halogen-Free | Yes, per IEC 61249-2-21 | β |
| Avalanche Rated | Yes (100% avalanche tested) | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 30V |
| Technology | β | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Continuous Drain Current (ID) at Ta | β | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | β | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | β | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | β | 80 mJ |
| Power Dissipation (PD) at Tc | β | 69 W |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Moisture Sensitivity Level (MSL) | β | 1 |
| Built-in Body Diode | β | Yes |
| RoHS Status | β | Compliant |
| Configuration | β | Single N-Channel with Built-in Diode |