BSC0902NSIATMA1 vs BSC019N04NSGATMA1 Comparison
Detailed side-by-side comparison of BSC0902NSIATMA1 by Infineon and BSC019N04NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0902NSIATMA1
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
BSC0902NSIATMA1 β ActiveInfineon
BSC019N04NSGATMA1
BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon
BSC019N04NSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC0902NSIATMA1 | BSC019N04NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.58 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 30V | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at TA=25C | 23 A | 30 A |
| Continuous Drain Current (ID) at TC=25C | 100 A | 100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm | β |
| Gate Charge QG(0V..10V) | 24 nC | β |
| Output Charge QOSS | 17 nC | β |
| Power Dissipation (TA) | 2.5 W | β |
| Power Dissipation (TC) | 48 W | β |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C |
| Package | PG-TDSON-8-6 (TDSON-8) | PG-TDSON-8-1 (TDSON-8 FL) |
| Mounting Type | Surface Mount | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | OptiMOS (trench) |
| Drain-Source Voltage (VDS) | β | 40 V |
| RDS(on) max at VGS=10V | β | 2.5 mΞ© |
| RDS(on) typ at VGS=10V | β | 1.9 mΞ© |
| Gate-Source Threshold (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |
| Power Dissipation (PD) at TC=25C | β | 125 W |