BSC0902NSIATMA1 vs BSC023N08NS5SCATMA1 Comparison
Detailed side-by-side comparison of BSC0902NSIATMA1 by Infineon and BSC023N08NS5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0902NSIATMA1
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
BSC0902NSIATMA1 β ActiveInfineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΞ© OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 β ActiveSpecification Comparison
| Parameter | BSC0902NSIATMA1 | BSC023N08NS5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 30V | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at TA=25C | 23 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm | β |
| Gate Charge QG(0V..10V) | 24 nC | β |
| Output Charge QOSS | 17 nC | β |
| Power Dissipation (TA) | 2.5 W | β |
| Power Dissipation (TC) | 48 W | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Package | PG-TDSON-8-6 (TDSON-8) | PG-WSON-8-2 (SuperSO8 DSC) |
| Mounting Type | Surface Mount | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Part Number | β | BSC023N08NS5SCATMA1 |
| Technology | β | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 202 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 188 W |
| On-State Resistance RDS(on) typ. | β | 2.3 mΞ© at VGS=10 V, ID=50 A |
| Gate Threshold Voltage VGS(th) typ. | β | 3.8 V |
| Total Gate Charge Qg | β | 98 nC at VGS=10 V |
| Input Capacitance Ciss | β | 6.8 nF |
| Output Capacitance Coss | β | 74 pF |
| Thermal Resistance RthJC | β | 0.72 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |