BSC0902NSIATMA1 vs BSC066N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC0902NSIATMA1 by Infineon and BSC066N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0902NSIATMA1
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
BSC0902NSIATMA1 β ActiveInfineon
BSC066N06NSATMA1
BSC066N06NSATMA1 - 60V N-Ch MOSFET 6.6mΞ© OptiMOS | Infineon
BSC066N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC0902NSIATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 30V | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at TA=25C | 23 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 256 A |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm | β |
| Gate Charge QG(0V..10V) | 24 nC | β |
| Output Charge QOSS | 17 nC | β |
| Power Dissipation (TA) | 2.5 W | β |
| Power Dissipation (TC) | 48 W | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Package | PG-TDSON-8-6 (TDSON-8) | PG-TDSON-8-6 (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 64 A |
| Continuous Drain Current (ID) at TC=100Β°C | β | 45 A |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | β | 6.6 mΞ© (max) |
| Gate Threshold Voltage (VGS(th)) | β | 1.7 V (typ) |
| Total Gate Charge (Qg) | β | 26 nC (typ) |
| Power Dissipation (PD) at TC=25Β°C | β | 46 W |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Thermal Resistance, Junction-to-Case (RΞΈJC) | β | 1.3 Β°C/W |
| Operating Junction Temperature | β | -55Β°C to +150Β°C |
| Technology | β | OptiMOS 5 60 V trench-gate |