BSC0902NSIATMA1 vs BSC084P03NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC0902NSIATMA1 by Infineon and BSC084P03NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0902NSIATMA1
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
BSC0902NSIATMA1 β ActiveInfineon
BSC084P03NS3GATMA1
BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
BSC084P03NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC0902NSIATMA1 | BSC084P03NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.24 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 30V | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at TA=25C | 23 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm | β |
| Gate Charge QG(0V..10V) | 24 nC | β |
| Output Charge QOSS | 17 nC | β |
| Power Dissipation (TA) | 2.5 W | β |
| Power Dissipation (TC) | 48 W | β |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C |
| Package | PG-TDSON-8-6 (TDSON-8) | PG-TDSON-8-5 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Polarity / Channel Type | β | P-Channel |
| Drain-Source Voltage (VDS) | β | -30 V |
| Continuous Drain Current (Ta) | β | 14.9 A |
| Continuous Drain Current (Tc) | β | 78.6 A |
| Rds(on) max @ VGS = -10 V | β | 6.1 mOhm |
| Rds(on) max @ VGS = -2.5 V | β | [DATA_NEEDED: Rds(on) at 2.5V] |
| Gate Threshold Voltage (VGS(th) typ) | β | -1.7 V |
| Total Gate Charge (Qg) | β | 58 nC @ VGS = -10 V |
| Input Capacitance (Ciss) | β | 3.19 nF |
| Output Capacitance (Coss) | β | 110 pF |
| Reverse Transfer Capacitance (Crss) | β | 1.52 nF |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 69 W |
| Technology Family | β | OptiMOS P3 |