BSC0902NSIATMA1 vs BSC0906NSATMA1 Comparison
Detailed side-by-side comparison of BSC0902NSIATMA1 by Infineon and BSC0906NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
BSC0902NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC0902NSIATMA1 | BSC0906NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 30V | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at TA=25C | 23 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm | β |
| Gate Charge QG(0V..10V) | 24 nC | β |
| Output Charge QOSS | 17 nC | β |
| Power Dissipation (TA) | 2.5 W | β |
| Power Dissipation (TC) | 48 W | β |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C (junction, typical) |
| Package | PG-TDSON-8-6 (TDSON-8) | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 18 A |
| Continuous Drain Current (ID) at Tc | β | 63 A |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 30 W |
| Technology | β | OptiMOS |
| RDS(on) max (typical reference) | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg @ VGS=10V] |
| Pin Count | β | 8 |