BSC0902NSIATMA1 vs BSP88H6327XTSA1 Comparison
Detailed side-by-side comparison of BSC0902NSIATMA1 by Infineon and BSP88H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0902NSIATMA1
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
BSC0902NSIATMA1 β Active
Specification Comparison
| Parameter | BSC0902NSIATMA1 | BSP88H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.21 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 30V | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at TA=25C | 23 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm | β |
| Gate Charge QG(0V..10V) | 24 nC | β |
| Output Charge QOSS | 17 nC | β |
| Power Dissipation (TA) | 2.5 W | β |
| Power Dissipation (TC) | 48 W | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Package | PG-TDSON-8-6 (TDSON-8) | PG-SOT223-4 (SOT-223-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 240 V |
| Continuous Drain Current (ID) | β | 350 mA at Ta=25 C |
| Power Dissipation (PD) | β | 1.8 W at Ta=25 C |
| On-State Resistance (RDS(on)) | β | 6 ohm typical at VGS=10 V |
| Configuration | β | Single |
| Operating Temperature | β | -55 C to +150 C |
| Technology | β | SIPMOS (planar enhancement mode) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) min/typ/max] |
| Automotive Qualification | β | AEC-Q101 qualified |
| Lead Plating | β | Pb-free |
| RoHS Compliance | β | Compliant |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | β | SOT-223 tab is drain |