BSC0902NSIATMA1 vs IPD060N03LGATMA1 Comparison
Detailed side-by-side comparison of BSC0902NSIATMA1 by Infineon and IPD060N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
BSC0902NSIATMA1 β Active
Specification Comparison
| Parameter | BSC0902NSIATMA1 | IPD060N03LGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 30V | OptiMOS 30V |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at TA=25C | 23 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm | β |
| Gate Charge QG(0V..10V) | 24 nC | β |
| Output Charge QOSS | 17 nC | β |
| Power Dissipation (TA) | 2.5 W | β |
| Power Dissipation (TC) | 48 W | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Package | PG-TDSON-8-6 (TDSON-8) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (Unlimited) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID, TC=25C) | β | 50 A |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | β | 200 A |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| Gate Threshold Voltage (VGS(th), typ) | β | 1.7 V |
| On-State Resistance (RDS(on), VGS=10V) | β | 6.0 mOhm (typ) / 7.5 mOhm (max) |
| On-State Resistance (RDS(on), VGS=4.5V) | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg, typ) | β | 21 nC |
| Output Charge (Qoss, typ) | β | [DATA_NEEDED: Qoss] |
| Reverse Recovery Charge (Qrr) | β | [DATA_NEEDED: Qrr] |
| Power Dissipation (PD, TC=25C) | β | 56 W |
| Operating Junction Temperature | β | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC, max) | β | 2.5 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | β | 62 C/W |
| Package / Case | β | PG-TO252-3 (DPAK) |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Packing | β | Tape & Reel (T/R), 2500 per reel |
| AEC-Q101 / Automotive Grade | β | Not qualified |
| Technology / Generation | β | OptiMOS 30V, trench MOSFET |