BSC0906NSATMA1 vs BSC066N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC0906NSATMA1 by Infineon and BSC066N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0906NSATMA1
BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon
BSC0906NSATMA1 β ActiveInfineon
BSC066N06NSATMA1
BSC066N06NSATMA1 - 60V N-Ch MOSFET 6.6mΞ© OptiMOS | Infineon
BSC066N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC0906NSATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.49 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta | 18 A | β |
| Continuous Drain Current (ID) at Tc | 63 A | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 30 W | β |
| Package | PG-TDSON-8-6 (SuperSO8, 5x6 mm) | PG-TDSON-8-6 (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS | OptiMOS 5 60 V trench-gate |
| RDS(on) max (typical reference) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | 1.7 V (typ) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ VGS=10V] | 26 nC (typ) |
| Operating Temperature Range | -55C to +150C (junction, typical) | β |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 64 A |
| Continuous Drain Current (ID) at TC=100Β°C | β | 45 A |
| Pulsed Drain Current (IDM) | β | 256 A |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | β | 6.6 mΞ© (max) |
| Power Dissipation (PD) at TC=25Β°C | β | 46 W |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Thermal Resistance, Junction-to-Case (RΞΈJC) | β | 1.3 Β°C/W |
| Operating Junction Temperature | β | -55Β°C to +150Β°C |
| MSL Level | β | 1 |