BSC0906NSATMA1 vs BSC077N12NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC0906NSATMA1 by Infineon and BSC077N12NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0906NSATMA1
BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon
BSC0906NSATMA1 β ActiveInfineon
BSC077N12NS3GATMA1
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΞ© | Infineon
BSC077N12NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC0906NSATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.71 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta | 18 A | 13.4 A |
| Continuous Drain Current (ID) at Tc | 63 A | 98 A |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 30 W | β |
| Package | PG-TDSON-8-6 (SuperSO8, 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS | β |
| RDS(on) max (typical reference) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ VGS=10V] | β |
| Operating Temperature Range | -55C to +150C (junction, typical) | β |
| Pin Count | 8 | 8 |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 3 (120 V) |
| Transistor Type | β | N-Channel MOSFET (enhancement-mode trench) |
| Drain-Source Voltage (VDS) | β | 120 V |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) max @ VGS=10V | β | 7.7 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 2.5 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Tc | β | 139 W |
| Operating Junction Temperature | β | -55C to +150C |
| MSL Level | β | 1 |
| Automotive Grade | β | Yes (per Infineon part number suffix / datasheet) |