BSC0906NSATMA1 vs BSC0902NSATMA1 Comparison

Detailed side-by-side comparison of BSC0906NSATMA1 by Infineon and BSC0902NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC0906NSATMA1

BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon

BSC0906NSATMA1 βœ“ Active

Specification Comparison

Parameter BSC0906NSATMA1 BSC0902NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.78
FET Type N-Channel β€”
Drain-to-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) at Ta 18 A β€”
Continuous Drain Current (ID) at Tc 63 A β€”
Power Dissipation at Ta 2.5 W β€”
Power Dissipation at Tc 30 W β€”
Package PG-TDSON-8-6 (SuperSO8, 5x6 mm) PG-TDSON-8-6 (SuperSO8)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS β€”
RDS(on) max (typical reference) [DATA_NEEDED: RDS(on) max @ VGS=10V] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg @ VGS=10V] β€”
Operating Temperature Range -55C to +150C (junction, typical) -55C to +150C (Tj)
Pin Count 8 β€”
RoHS Status Compliant β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID, Ta) β€” 24 A
Pulsed Drain Current (IDM, Tc) β€” 100 A
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 48 W
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max β€” [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max β€” [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) β€” [DATA_NEEDED: Qg typical]
Qualification β€” JEDEC qualified for target applications
RoHS Compliance β€” Compliant (Pb-free lead plating)
Halogen-Free β€” Yes, per IEC 61249-2-21
Avalanche Rated β€” Yes (100% avalanche tested)

Datasheets & Resources

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