BSC0911NDATMA1 vs BSC011N03LSATMA1 Comparison
Detailed side-by-side comparison of BSC0911NDATMA1 by Infineon and BSC011N03LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0911NDATMA1
BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon
BSC0911NDATMA1 β ActiveInfineon
BSC011N03LSATMA1
BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon
BSC011N03LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC0911NDATMA1 | BSC011N03LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | β |
| Configuration | Dual N-Channel (2 N-CH) | β |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Continuous Drain Current (ID) | 18 A | β |
| Pulsed Drain Current (IDM) | 30 A | 100 A (TC) |
| Power Dissipation (PD) | 1 W | β |
| Package | PG-TISON-8 (8-PowerTDFN) | PG-TDSON-8-1 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| Channel Type | N-Channel Enhancement Mode | β |
| Technology | OptiMOS trench MOSFET | β |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) at 10V VGS] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: total gate charge Qg] |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Product Series | β | OptiMOS 30V |
| Polarity | β | N-Channel |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TA=25C | β | 37 A |
| On-State Resistance (RDS(on)) at VGS=10V | β | 1.1 mOhm (typ) |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | β | 1.0 V to 2.2 V (typ 1.6 V) |
| Power Dissipation (PD) at TC=25C | β | 96 W |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |
| Operating Temperature Range | β | -55C to +150C |