BSC0911NDATMA1 vs BSC034N06NSATMA1 Comparison

Detailed side-by-side comparison of BSC0911NDATMA1 by Infineon and BSC034N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC0911NDATMA1

BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 βœ“ Active
Infineon
BSC034N06NSATMA1

BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 βœ“ Active

Specification Comparison

Parameter BSC0911NDATMA1 BSC034N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.65
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 25V β€”
Configuration Dual N-Channel (2 N-CH) β€”
Drain-Source Voltage (VDS) 25 V 60 V
Continuous Drain Current (ID) 18 A β€”
Pulsed Drain Current (IDM) 30 A [DATA_NEEDED: IDM]
Power Dissipation (PD) 1 W β€”
Package PG-TISON-8 (8-PowerTDFN) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C (junction) β€”
Channel Type N-Channel Enhancement Mode β€”
Technology OptiMOS trench MOSFET OptiMOS 5
Gate Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) at 10V VGS] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: Qg]
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Polarity β€” N-Channel
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25C β€” 100 A
On-Resistance RDS(on) max at VGS=10V β€” 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V β€” [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th)]
Power Dissipation at Ta=25C β€” 2.5 W
Power Dissipation at Tc=25C β€” 74 W
Operating Temperature Range β€” -55C to +150C

Datasheets & Resources

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