BSC0911NDATMA1 vs BSC066N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC0911NDATMA1 by Infineon and BSC066N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0911NDATMA1
BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon
BSC0911NDATMA1 β ActiveInfineon
BSC066N06NSATMA1
BSC066N06NSATMA1 - 60V N-Ch MOSFET 6.6mΞ© OptiMOS | Infineon
BSC066N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC0911NDATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 25V | β |
| Configuration | Dual N-Channel (2 N-CH) | β |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (ID) | 18 A | β |
| Pulsed Drain Current (IDM) | 30 A | 256 A |
| Power Dissipation (PD) | 1 W | β |
| Package | PG-TISON-8 (8-PowerTDFN) | PG-TDSON-8-6 (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| Channel Type | N-Channel Enhancement Mode | β |
| Technology | OptiMOS trench MOSFET | OptiMOS 5 60 V trench-gate |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) at 10V VGS] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 26 nC (typ) |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Continuous Drain Current (ID) at TC=25Β°C | β | 64 A |
| Continuous Drain Current (ID) at TC=100Β°C | β | 45 A |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | β | 6.6 mΞ© (max) |
| Gate Threshold Voltage (VGS(th)) | β | 1.7 V (typ) |
| Power Dissipation (PD) at TC=25Β°C | β | 46 W |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Thermal Resistance, Junction-to-Case (RΞΈJC) | β | 1.3 Β°C/W |
| Operating Junction Temperature | β | -55Β°C to +150Β°C |