BSC0911NDATMA1 vs BSC0993NDATMA1 Comparison
Detailed side-by-side comparison of BSC0911NDATMA1 by Infineon and BSC0993NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0911NDATMA1
BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon
BSC0911NDATMA1 β ActiveInfineon
BSC0993NDATMA1
BSC0993NDATMA1 - 30V 17A Dual N-Ch OptiMOS 5 Array | Infineon
BSC0993NDATMA1 β ActiveSpecification Comparison
| Parameter | BSC0911NDATMA1 | BSC0993NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $1.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | β |
| Configuration | Dual N-Channel (2 N-CH) | Dual N-Channel (Array) |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) | 18 A | β |
| Pulsed Drain Current (IDM) | 30 A | β |
| Power Dissipation (PD) | 1 W | β |
| Package | PG-TISON-8 (8-PowerTDFN) | PG-TISON-8 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| Channel Type | N-Channel Enhancement Mode | β |
| Technology | OptiMOS trench MOSFET | OptiMOS 5 trench MOSFET |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) at 10V VGS] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Qg value] |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Product Series | β | OptiMOS 5 30V |
| Drain-Source Voltage (Vds) | β | 30 V |
| Continuous Drain Current (Id) @ Ta | β | 17 A |
| Channel Mode | β | Enhancement |
| Operating Temperature Range | β | -55C to +150C (junction) |
| ESD Protection | β | Yes (integrated) |
| Lead-Free | β | Yes |
| Rds(on) max @ Vgs=10V | β | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |